Everspin rebrands its persistent memory product family as PERSYST Read the full story Posted: Apr 09,2024
Avalanche Technology adds new 2Gb and 8Gb densitites of its 3rd-Gen space-grade STT-MRAM Read the full story Posted: Mar 27,2024
Researchers report the first all-antiferromagnetic tunnel junction device with both electrical switching and electrical readout Read the full story Posted: Mar 23,2024
Tiempro Secure's Secure Element succesfully implemented in GlobalFroundries 22-nm process with MRAM memory Read the full story Posted: Mar 21,2024
Everspin hopes to get US government support to expand its 200 mm MRAM production capacity Read the full story Posted: Mar 13,2024
Renesas developed new STT-MRAM circuit technology, achieves the world's fastest random access speed Read the full story Posted: Feb 24,2024
PSMC collaborates with Power Spin for MRAM production by 2029 Read the full story Posted: Feb 07,2024
Tohoku University researchers develop a high performance X nm MTJ Read the full story Posted: Jan 19,2024